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FD600 ZT485E 15SMC56A B0520 N4003 CPC1708J SIS990DN B019N
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  unit: mm sod-123 3.7 +0.1 -0.1 2.7 +0.1 -0.1 0.55 +0.1 -0.1 0.1max 1.6 +0.1 -0.1 0.50 0.35 1.1 +0.05 -0.05 0.1 +0.05 -0.02 kbr0520lw/0530w/0540w (mbr0520lw/0530w/0540w) features low forward voltage drop guard ring construction fortransient protection. high conductance. alsoavailableinleadfreeversion. electrical characteristics ta = 25 symbol testconditons min typ max unit kbr0520lw i r =250 a 20 kbr0530w i r =200 a 30 kbr0540w i r =20 a 40 kbr0520lw 0.3 kbr0530w 0.375 kbr0520lw 0.375 kbr0530w 0.430 kbr0540w 0.510 forward voltage kbr0540w v f3 i f =1a 0.62 v kbr0520lw i r1 v r =10v 75 a kbr0530w i r2 v r =15v 20 a kbr0520lw 250 a kbr0540w 10 a kbr0530w i r4 v r =30v 130 a kbr0540w i r5 v r =40v 20 a capacitance between terminals c t v r =0v,f=1mhz 170 pf v reverse current reverse current reverse current forward voltage forward voltage i f =0.1a v f2 i f = =0.5a i r3 v r =20v parameter minimum reverse breakdown voltage v (br)r v f1 v v marking no. kbr0520lw kbr0530w kbr0540w marking sd se sf absolute maximum ratings ta = 25 parameter symbol kbr0520lw kbr0530w kbr0540w unit peak repetitive peak reverse voltage v rrm working peak v rwm dc blocking voltage v r rms reverse voltage v r(rms) 14 21 28 v average rectified output current i o ma peak forward surge current i fsm a power dissipation pd mw voltage rate of change dv/dt v/ s thermal resistance junction to ambient r ja /w storage temperature t stg 1000 v 5.5 410 304 -65to+125 30 20 40 500 product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
smd type typical characteristics fig.1 forward current derating curve fig.2 typical forward characteristics fig.3 typ.junction capacitance vs reverse voltage kbr0540w kbr0530w kbr0520lw kbr0520lw/0530w/0540w (mbr0520lw/0530w/0540w) product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123


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